https://doi.org/10.15407/spqeo6.02.227
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 2. P. 227-232.
PACS: 72.80.Ey
Studies of CdHgTe as a material
for x- and g-ray detectors
L.A. Kosyachenko, V.V. Kulchynsky, O.L. Maslyanchuk,
S.Yu. Paranchych, V.M. Sklyarchuk
Chernivtsi National University, 2 Kotsyubinsky
str., 58012 Chernivtsi, Ukraine
e-mail: lakos@chv.ukrpack.net
Abstract. Optical, electric and photoelectric properties of Cd1-xHgxTe
alloy with a low Hg content (x = 0.05) have been studied. The depth of
impurity levels determining the conductivity of the material, their concentration
and compensation degree, as well as the carrier lifetime and surface-recombination
velocity have been found.
Keywords:
CdHgTe alloy, radiation detectors, conductivity, carrier lifetime.
Paper received 25.05.03; accepted for publication
16.06.03.
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