https://doi.org/10.15407/spqeo6.02.233
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 2. P. 233-237.
PACS: 07.07.Df, 61.72.Tt
Peculiarities of injection phenomena in heavily
doped silicon structures and development of radiation-resistant diode
temperature sensors
Yu.M. Shwarts, V.N. Sokolov, M.M. Shwarts,
E.F. Venger
Institute of Semiconductor Physics, NAS
Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38(044) 265 7463; e-mail: shwarts@isp.kiev.ua
Abstract. To
explain the experimental behaviour of differential characteristics (ideality
factor, differential resistance) before and after radiation influence,
a theoretical model of injection current flow mechanisms for the silicon
diode temperature sensors (DTSs) is proposed. The observed nonmonotonic
dependencies of the ideality factor on the current are described well
by the influence of generation-recombination and drift current components
to the diffusion current of the minority carriers. The developed model
allowed to find characteristic lifetimes of the minority carriers in the
base and in the space-charge region of the diode structure with heavily
doped base and emitter regions. Investigations of electrophysical and
metrological characteristics of the DTSs allowed to reveal such operating
regimes that are characterised by minimal influence of radiation on the
device thermometric characteristics.
Keywords:
radiation-resistance, diode temperature sensor, silicon diode structure.
Paper received 11.02.03; accepted for publication
16.06.03.
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