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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 2. P. 026-033.
Modelling of micro- and nanodomain arrays recorded in
ferroelectrics-semiconductors by using atomic force microscopy
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
E-mail: morozo@i.com.ua
Abstract. The thermodynamical theory of nanodomain tailoring in ferroelectrics-
semiconductors allowing for semiconducting properties, screening and size effects is
presented. The obtained analytical results prove that domains appearance is similar to the
first order phase transition and completely agree with experimentally observed threshold
nanodomains recording in Pb(Zr,Ti)O 3 and LiTaO 3 thin films. The realistic dependence
of equilibrium nanodomain radius over applied voltage in BaTiO 3 , LiNbO 3 ferroelectric-
semiconductors, LiTaO 3 and Pb(Zr,Ti)O 3 thin films have been calculated. These results
will help researchers both to achieve the reliable understanding of physical process
taking place during nanoscale polarization reversal in the ferroelectric-semiconducting
media and to determine the necessary conditions in order to record stable nanodomains
with optimum lateral sizes and configuration to increase recording density and create
various profiled microstructures.
Keywords: ferroelectric nanodomains, screening effects, atomic force microscopy,
information recording.
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