|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 2. P. 116-124.
Domain structure formation by using Scanning Probe Microscopy:
equilibrium polarization distribution and effective piezoelectric
response calculations
1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine
Abstract. In the paper we adopt the analytical Landau-Ginzburg-Devonshire theory to
describe the ferroelectric domain structure formation using Scanning Probe Microscopy.
We calculate the effective local piezoresponse of the domain structure within the
decoupling approximation using the conventional relation between piezoelectric tensor
components and the spontaneous polarization vector. The depth profile of the
polarization distribution was derived from the nonlinear Landau-Ginzburg-Devonshire
equation. We demonstrate that depending on the material parameters such as the intrinsic
domain wall width and probe apex geometry, the shape of the nucleating nanodomains
induced by the probe can be either oblate or prolate. The derived analytical expressions
for the polarization redistribution caused by the biased probe are valid for both first and
second order ferroelectrics.
Keywords: effective piezoelectric response, depth profile, nanodomain, scanning probe
microscopy.
| ||