Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 2. P. 162-164.
https://doi.org/10.15407/spqeo12.02.162

Determination of refractive index dispersion and thickness of thin antireflection films TiO2 and Si3N4 on surfaces of silicon photoelectric converters
V.V. Donets1, L.Y. Melnichenko2, I.A. Shaykevich2, O.V. Lomakina2

1NE “Arsenal”, 8, Moskovs’ka str., Kyiv 01010, Ukraine
2Taras Shevchenko Kyiv National University, Physics Department 2, prоspect Glushkova, Kyiv 03127, Ukraine E-mail: prorok@univ.kiev.ua, shaykevi@univ.net.ua

Abstract. Offered in this work is the method to determine the thickness and refractive index dispersion of thin antireflection films on absorbing substrates by using a spectral dependence of reflectivity at normal light incidence. The method has been applied to determine the above characteristics of thin antireflection films TiO 2 and Si 3 N 4 on surfaces of silicon photoelectric converters. The films were prepared by chemical sedimentation. The obtained experimental data have been treated using a computer program to deduce dispersion curves and thickness values. The results have been interpreted.

Keywords: thin film, refractive index, antireflection film, spectral dependence, photoelectric converter.hydrogenic impurity, Schrödinger equation, spherical quantum dot.

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