|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 2. P. 137-144.
Dynamic properties and avalanche noise analysis of 4H-SiC
over wz-GaN based IMPATTs at mm-wave window frequency
1Purushottam Institute of Engineering & Technology, Rourkela, Odisha, India
Abstract.
The mm-wave as well as noise properties of IMPATT diodes for the D-band
are efficiently determined, with 4H-SiC and wurtzite type GaN as base materials, using
advanced computer simulation techniques developed by the authors. The breakdown
voltage (180 V) and efficiency (14.7%) is higher in case of 4H-SiC as compared to wz-
GaN based diode having the breakdown voltage (153 V) and efficiency (13.7%). The
study indicates that 4H-SiC IMPATT diode is capable of generating high RF power
density of about 8.383×10 10 W/m 2 as compared to GaN IMPATT diode that is capable to
develop the power density 6.847×10 10 W/m 2 for the same frequency of operation. It is
also observed that wz-GaN exhibits better noise behavior 7.42×10 -16 V 2 ·s than SiC
(5.16×10 -15 V 2 ·s) for IMPATT operation at 140 GHz. A tradeoff between the power
output and noise from the device reveals that wz-GaN would be a suitable base material
for high power application of IMPATT diode with moderate noise.
Keywords: avalanche noise, gallium nitride, IMPATT, RF power, silicon carbide, mm-
wave window frequency.
| ||