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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 2. P. 183-187.
Influence of electron-electron drag on piezoresistance of n-Si
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
45, prospect Nauky, 03028 Kyiv, Ukraine
E-mail: igorboiko@yandex.ru; phone: (044)236-5422
Abstract.
Piezoresistance of n-Si is considered with due regard for inter-valley drag. It
has been shown that inter-valley drag gains the piezocoefficient and diminishes the
mobility. In the region of nondegenerate carriers, the effect of drag increases when the
carrier concentration rises and temperature falls.
Keywords: silicon, balance equation, mobility, piezoresistance, inter-valley drag.
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