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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 2. P. 200-202.
Chemical-dynamic polishing of semiconductor materials
based on Bi and Sb chalcogenides by using HNO 3 –HCl solutions
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine, Phone: 38 (044) 525-57-55, e-mail: tomashyk@isp.kiev.ua
Abstract.
The chemical etching of Ві 2 Те 3 and n-(Bi 2 Te 3 ) 0.9 (Sb 2 Te 3 ) 0.05 (Sb 2 Se 3 ) 0.05 and p-
(Bi 2 Te 3 ) 0.25 (Sb 2 Te 3 ) 0.72 (Sb 2 Se 3 ) 0.03 crystals of solid solutions with HNO 3 –HCl etchant
compositions was investigated. The dependences of dissolution rate of these
semiconductors on etchant composition, stirring, temperature and their shelf-time storage
have been studied. It was shown that the process of dissolution of the investigated
materials in the polishing solutions HNO 3 –HCl is limited by the diffusion stages.
Keywords: chemical etching, etchant, solid solutions, bismuth telluride, etching rate,
chemical-dynamic polishing.
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