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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 2. P. 213-221.
The kinetic of point defect transformation during the annealing
process in electron-irradiated silicon
Institute for Nuclear Research, NAS of Ukraine,
47, prospect Nauky, 03680 Kyiv, Ukraine
E-mail: gaidar@kinr.kiev.ua
Abstract.
The A-centers (VO) annealing and transformation of precursors to form stable
С i О i defects during these processes are described. It was found the necessity to take into
account annihilation of vacancy type defects with the interstitial type mobile defects to
describe the annealing of defects. It was shown that the energies of migration for vacancy
(V) and interstitial carbon atoms С i that are defined by the degree of their localization in
silicon lattice at the temperature close to 550 K are equal and
, accordingly. The values for potential barriers and their positions on the
migration path of interstitial carbon atoms to oxygen (Em=1.1 eV, Ec=1.16 eV) in the region for capture of С i
atom by О i atom (with the radius 14.7 Å) are determined. It was brought evidences that
vibration band of absorption at is attributed to center modified by
carbon, and the band is attributed to a metastable state of С defect
associated with an oxygen dimer. The position of the center donor level in the
forbidden band of silicon is determined as Еv + 0.415 eV.
Keywords: silicon, point defects, electron irradiation, annealing.
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