Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 2. P. 091-116.
DOI: https://doi.org/10.15407/spqeo15.02.091

Efficiency a-Si:H solar cell. Detailed theory
Yu.V. Kryuchenko, A.V. Sachenko, A.V. Bobyl, V.P. Kostylyov, P.N. Romanets, I.O. Sokolovskyi, A.I. Shkrebtii, E.I. Terukov

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine

Abstract. We develop a detailed formalism to photoconversion efficiency η of hydrogenated amorphous silicon (a-Si:H) based solar cells with a contact grid. This efficient three-dimensional model allows firstly optimization of the p+-i-n sandwich in terms of carrier mobilities, thickness of the layers, doping levels and others. Secondly, geometry of the grid fingers that conduct the photocurrent to the bus bars and ITO/SiO2 layers has been optimized, and the effect of non-zero sun beam incidence angles has been included as well. The model allows optimization of the amorphous Si based solar cells in a wide range of key parameters.

Keywords: photoconversion efficiency, hydrogenated amorphous silicon, solar cells.

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