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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 2. P. 170-175.
Residual stresses and piezoelectric properties of the HgCdTe –
based compound heterostructures under the anisotropic
deformation restriction
V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine
41, prospect Nauky, 03028 Kyev, Ukraine
Phone: (044) 525-18-13; fax: (044) 525 1810
E-mail: alex_tenet@isp.kiev.ua
Abstract. Narrow-gap mercury cadmium telluride thin films grown by MBE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs) were investigated as a piezoelectric heterostructure for IR detection. Mechanical stresses at the layer-substrate interface were analyzed. It was determined that for [310] oriented MCT-based structures under the anisotropic restriction of the deformation the nonzero shear components of the strain tensor arise and stress induced piezoelectric polarization is generated. Existence of the built-in electric field in the strained MCT-based heterostructure results in the spatial separation of the nonequilibrium carriers and the possibility of the room temperature detection of the IR radiation is realized.
Keywords: strained heterostructure, piezoelectric properties, HgCdTe.
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