Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 2. P. 170-175.
DOI: https://doi.org/10.15407/spqeo15.02.176

Graded-gap AlInN Gunn diodes
I.P. Storozhenko1, A.N. Yaroshenko2, M.V. Kaydash1

1National University of Pharmacy, 53, Pushkins’ka str. 61002 Kharkiv, Ukraine
2V. Karazin National University of Kharkiv, 4, Svoboda Sq., 61077 Kharkiv, Ukraine E-mail: storozhenko_igor@mail.ru

Abstract. The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN. We have obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered. Cutoff frequency and minimum length of the active region have been estimated. Performances of graded-gap AlInN diodes are compared with the performances of InN and AlN diodes.

Keywords: Gunn diode, transfer electron device, graded-gap semiconductor, nitride semiconductor, intervalley electron transfer, terahertz range.

Full Text (PDF)

Back to N2 Volume 15