Semiconductor Physics, Quantum Electronics & Optoelectronics. 2013. V. 16, N 2. P. 111-116.
DOI: https://doi.org/10.15407/spqeo16.02.111/

                                                                 

ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu1.8S heterostructure
T.V. Semikina1, S.V. Mamykin1, M. Godlewski2, G. Luka2, R. Pietruszka2, K. Kopalko2, T.A. Krajewski2, S. Gierałtowska2, Ł. Wachnicki2, L.N. Shmyryeva3

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail: tanyasemikina@gmail.com
2Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland; e-mail: godlew@ifpan.edu.pl
3National Technical University of Ukraine “KPI”, 33, prospect Peremogy 03056 Kiev, Ukraine

Abstract. ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n-CdS/n-CdTe/p-Cu1.8S heterostructure. The parameters of solar cells with ZnO electrode are calculated from light and dark current-voltage characteristics and compared with those obtained for structures with Mo contact. The advantages of ZnO electrode are discussed.

Keywords: solar cells on n-CdS/n-CdTe/p-Cu1.8S heterostructure, conductive ZnO films, atomic layer deposition.

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