Semiconductor Physics, Quantum Electronics & Optoelectronics. 2013. V. 16, N 2. P. 123-127.
DOI: https://doi.org/10.15407/spqeo16.02.123/

                                                                 

The influence of obtaining and heat treatment conditions on the structure of As2S3-SbSI system
V.M. Rubish1, L. Bih2, O.A. Mykaylo3, O.V. Gorina1, V.M. Maryan1, S.M. Gasinets1, A.M. Solomon4, P. Lazor5, S.O. Kostyukevych6

1Uzhgorod Scientific-Technological Center of the Institute for Information Recording, NAS of Ukraine, 4, Zamkovi Skhody str., 88000 Uzhhorod, Ukraine, e-mail: center.uzh@gmail.com
2UFR-PCMI: ceramiques et verres, FST-Errachidia, 52000, B.P. 509, Boutalamine, Errachidia, Morocco
3Institute of Solid State Physics & Chemistry, Uzhhorod National University, 36, Pidgirna str., 88000 Uzhhorod, Ukraine
4Institute of Electron Physics, NAS of Ukraine, 21, Universitetska str., 88017 Uzhhorod, Ukraine
5Institute of Earth Science, Uppsala University, S-752 36 Uppsala, Sweden
6V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 03028 Kyiv, Ukraine

Abstract. (As2S3)100-x(SbSI)x (x = 80 and 90) glasses were prepared by cooling homogenized melts from 720…750 K in cold water. Their structure and structural changes under heat treatment of glasses are confirmed by studies of micro-Raman scattering and X-ray diffraction. In the matrix of these glasses, we observed SbSI nanocrystalline inclusions. It has been shown that the sizes of crystalline inclusions are dependent on the heat treatment regimes.

Keywords: chalcogenide glasses, ferroelectrics, Raman spectra, X-ray diffraction, structure, nanocrystal.

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