Semiconductor Physics, Quantum Electronics & Optoelectronics. 2013. V. 16, N 2. P. 136-139.
DOI: https://doi.org/10.15407/spqeo16.02.136/

                                                                 

Modified correlation equation in the FSDP-related void-based model for As2S(Se)3 chalcogenide glasses
T.S. Kavetskyy

Ivan Franko Drohobych State Pedagogical University, Solid-State Microelectronics Laboratory, 24, I. Franko str., 82100 Drohobych, Ukraine

Abstract. Revised in this work is the correlation equation Q1 = 2.3×π/D in the FSDP-related void-based model for As2S(Se)3 chalcogenide glasses between the first sharp diffraction peak (FSDP) position, Q1, and nanovoid diameter, D, are modified to be presented in the form of Q1 = 1.75×π/D, taking into account a newly deduced formula for positron lifetime, τ2, versus void radius, R. It is valid for those molecular substrates for R up to 5 Å and when no orthopositronium (o-Ps) or very small fractions of o-Ps components are observed in positron annihilation lifetime spectroscopy.

Keywords: chalcogenide glass, first sharp diffraction peak, positron annihilation, voids.

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