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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2013. V. 16, N 2. P. 152-161.
Electron mobility in the GaAs/InGaAs/GaAs quantum wells
1Institute of Physics, National Academy of Sciences of Ukraine, 03680 Kiev, Ukraine
Phone: +38(044) 525-79-51, e-mail: vainberg@iop.kiev.ua Abstract. The temperature dependence of the electron lateral mobility in quantum wells of the GaAs/InGaAs/GaAs heterostructures with delta-like doping has been studied. Two types of sample doping – in the quantum well and in the adjacent barrier at a small distance from the well – were used. In the case of shallow wells, in such structures the experimental results may be well described by known electron scattering mechanisms taking into account the shape of real envelope wave functions and band bending due to non-uniform distribution of the positive and negative space charges along the growth direction of heterostructure layers. In the case of delta-like doping in the well, a good agreement between experiment and calculations is achieved, if one takes into account a contribution to electron transport of the states of the impurity band formed by the delta-impurity beneath the bottom of the lowest quantum subband.
Keywords: heterostructure, quantum well, electron mobility, lateral transport, semiconductor.
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