Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 2. P. 117-122.
https://doi.org/10.15407/spqeo18.02.117

Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique
A.P. Shapovalov1, I.V. Korotash1, E.M. Rudenko1*, F.F. Sizov2, D.S. Dubyna1, L.S. Osipov1, D.Yu. Polotskiy1, Z.F. Tsybrii2, A.A. Korchovyi2

1G.V. Kurdyumov Institute for Metal Physics, NAS of Ukraine, 36, Academician Vernadsky Blvd., 03680 Kyiv, Ukraine,
Phone/fax: +38(044) 424-3432; *e-mail: rudenko@imp.kiev.ua
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine, Phone/fax: +38(044) 525-6296, e-mail: sizov@isp.kiev.ua

Abstract. Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF plasma of helicon discharge allowed us to deposit AlN coatings on thermolabile substrates, significantly increasing the deposition rate. A study of spectral properties of AlN films (reflection and transmission spectra within the range 2…25 μm) has been carried out by using the infrared Fourier spectrometer Spectrum BX-II. It has been shown that the obtained composite structures (AlN coatings on teflon and mylar substrates) could be used as passive filters in the infrared spectral range.

Keywords: AlN films, coatings on polymeric materials, optical properties, cathodic arc plasma deposition technique.

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