Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (2), P. 179-184 (2017).

Nanostructuring the SiOx layers by using laser-induced self-organization
O.V. Steblova1, L.L. Fedorenko2, A.A. Evtukh2

1Taras Shevchenko Kyiv National University, Institute of High Technologies, Kyiv, Ukraine, e-mail:
2V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41, prospect Nauky, 03680 Kyiv, Ukraine; e-mail:

Abstract. The processes of laser-induced transformation of SiOx oxide layers into the nanocomposite ones were studied. The possibility of phase separation in the form of Si nanocrystals surrounded by corresponding SiO2 oxide matrix under irradiation by nanosecond pulses of YAG:Nd+3-laser were shown. Laser radiation at the fundamental wavelength, λ1 = 1064 nm, and second harmonic, λ2 = 532 nm, were applied at researches. The size and surface concentration of nanofragments dependences on the intensity and wavelength of the laser irradiation have been determined from experimental data based on atomic force microscopy, infrared transmission spectra and electro-physical measurements. SiOx nanocomposite layers containing Si nanoparticles, the size of which depends on laser beam intensity and wavelength, have been obtained. The processes of nanoparticles formation occur mainly through generation and mass transfer of interstitial atoms in the solid mode (before the melting point threshold) due to the effect of laser thermal shock.

Keywords: nanocrystal, oxides, nanocomposite, laser thermal shock, mass transfer.

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