Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (2), P. 254-258 (2017).
DOI: https://doi.org/10.15407/spqeo20.02.254

Some technology aspects for quantum enestor through AIIIBV multicomponent nanoepitaxy
V. Osinsky1, I. Masol1, N. Lyahova1, N. Suhoviy1, M. Onachenko1, A. Osinsky2

1Institute of Microdevices, NAS of Ukraine 3, Pivnichno-Syretska str., 04136 Kyiv, Ukraine E-mail: lyahovann@gmail.com
2Agnitron Technology, Eden Prairie, MN, USA

Abstract. For the first time, it has been considered some quantum enestor technology aspects concerning the integration approach for Si-CMOS and site-controlled InGaN/GaN quantum dots, which provides the possibility to realize single photon sources (SPS)/single photon detector (SPD) for quantum processing based on AIIIBV direct bandgap multicomponent heterogeneous nanostructures and their light energy storing capability, by an analogy with the photosynthetic process in plants.

Keywords: III-nitrides, LED, solid solutions, AIIIBV, energy storage.

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