Semiconductor Physics, Quantum Electronics & Optoelectronics, 22 (2), P. 193-200 (2019).
DOI: https://doi.org/10.15407/spqeo22.02.193


Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
Ya.Ya. Kudryk, V.S. Slipokurov

V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, prospect Nauky, 03680 Kyiv, Ukraine E-mail: konakova@isp.kiev.ua

Abstract. In this paper, a review of microwave avalanche transit-time diode (IMPATT diode) structures has been presented. The structure of IMPATT diode with a sharp p-n transition on Si has been considered, and functions of the ohmic contacts shown. Physical and technical requirements for contacts have been formulated as based on their functional purpose and the existing technological base. A review of existing ohmic contacts and their ranking in terms of suitability and promising use in IMPATT diode have been made. The structure of metallization for IMPATT diode was chosen in the framework of the specificity of the IMPATT diode operation.

Keywords: avalanche transit-time diode, ohmic contact, annealing temperature, current transfer mechanism.

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