Semiconductor Physics, Quantum Electronics & Optoelectronics, 23 (2), P. 141-145 (2020).

Effect of different parameters on the carrier mobility in NWTFET
R. Marki1*, M. Zaabat2

1Faculté des Sciences et de la Technologie, Département des sciences de la matière, Université Mohamed Chérif Messaadia de Souk-Ahras, Algeria
2Institut de physique, Université de Oum El Bouaghi, Algeria
*Corresponding author e-mail:

Abstract. In this paper, we have studied the effect of different parameters on carrier mobility in NWFET devices. Their characteristics have been investigated using the non-equilibrium Green function (NEGF) method. Our work involves the carrier mobility µ as a function of VDS taken from 0.1 V to 1 V for various gate lengths, namely: 10, 20, 30, 40, and 50 nm. Then, the variation of µ as a function of width of the nanowire varied from 2 up to 6 nm. After that, we have simulated µ as a function of the oxide thickness for the values: 2, 4 and 6 nm. Moreover, the mobility has been considered as dependent on the composition of high-k materials, namely: SiO2, HfO2, ZrO2. Our results clearly show that device characteristics can be improved by selecting geometrical and physical parameters.

Keywords: nanotransistor, NWFET, mobility, NEGF.

Full Text (PDF)

Back to Volume 23 N2

Creative Commons License
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.