¹Exploitation satellite communication Center, Algerian Space Agency, Algeria
²Department of Electrical and Electronic Engineering, Faculty of Technology, Materials and Renewable Energy Research Unit, University of Abou-Bakr Belkaid, Tlemcen, Algeria
³Department of Electrical and Electronic Engineering, Faculty of Technology,
University of Abou-Bakr Belkaid, Tlemcen, Algeria
*Corresponding author e-mail: zkourdi@cds.asal.dz

Abstract. In this paper, we study a field plate high electron mobility transistor (FP-HEMT) device with Al₂O₃ passivation, InAlN/GaN lattice matched, and a gate of 30-nm length. We simulate its performances evaluation in function of the thermal effect mode. We also show the analysis and simulation of this device with the proposed equivalent circuit that consists of inter-electrode distributed extrinsic parasitic and additional intrinsic feedback. Then, a study on how it can be used in thermal environment for satellite application. The simulator Tcad-Silvaco software has been used to predict results of the characteristics specified with a genetic algorithm, to improve the computation time and model accuracy. The obtained results confirm the feasibility of using this new device model with InAlN thin barrier, Filip Chip and field plate at the same time and in one structure at high amplifier signal mode, as well as in a geostationary thermal orbital.

Keywords: HEMT, thermal effect, telecom satellite, power amplification.

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