Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 3. P. 343-348.

PACS: 61.10.E, N; 61.72.D; 68.55.L

Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy

V.P. Klad'ko, L.I. Datsenko, Z.V. Maksimenko, O.S. Lytvyn, I.V. Prokopenko, Z. Zytkiewicz¹

Institute of Semiconductor Physics NAS of Ukraine, Kyiv, Ukraine
1 Institute of Physics PAN, Warsaw, Poland

Abstract. Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for quasiforbidden reflections (200) in the interval of wavelengths near absorption K-edges of GaAs components.

Keywords: X-ray, absorption K-edge, GaAs, stoichiometry, structure parameters, quasifor-bidden reflections.

Paper received 14.04.00; revised manuscript received 24.05.00; accepted for publication 06.06.00.

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