Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 3. P. 284-287.

PACS: 42.40.Eq, 78.30.Ly

Study of non-reversible photostructural transformations in As₄₀S_60-xSe_x layers applied for fabrication of holographic protective elements

A.V. Stronski1, M.Vlcek2, S.A. Kostyukevych3, V.M. Tomchuk3, E.V. Kostyukevych3, S.V. Svechnikov3,
A.A. Kudryavtsev3, N.L. Moskalenko3, A.A. Koptyukh3

1) Polight Technologies Ltd., 291 Cambridge Science Park, Cambridge, CB OWF, UK
2) University of Pardubice, Pardubice, 53210, Czech Republic
3) Institute of Semiconductor Physics, NAS of Ukraine, 41 prospect Nauky, 03028 Kyiv, Ukraine

Abstract. Thin vacuum-evaporated layers of As40S60-xSex composition are investigated using Raman spectroscopy from the viewpoint of thermo- and photostructural transformations in them. These transformations are considered as changes in their network structure including three types of piramidal units AsS3/2, AsSe3/2 and AsS(Se)3/2 as well as As4S(Se)4 and S(Se)n fragments in its initial state. Annealing or light exposure result in polymerization of the molecular groups and the decreasing number of homopolar bonds, which is thermodynamically favorable. Characteristics of sensivity to photon and electron exposure were investigated. Diffraction efficiency perfomances of a microrelief fabricated using these layers are presented.

Keywords: thin chalcogenide layer, non-reversible transformation, photostructural transformation, Raman spectroscopy, holographic protective elements.
Paper received 15.07.02; revised manuscript received 02.09.02; accepted for publication 10.12.02.

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