https://doi.org/10.15407/spqeo6.03.404
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 3. P. 404-410.
PACS: 85.30.De
New nonlinear model to determine
Cgs and
Cgd
capacities of GaAs MESFET
N. Merabtine1,
S. Amourache2,
Y. Saidi2,
M. Zaabat3,
Ch. Kenzai2
1Laboratoire Eléctromagnétisme et Télécommunication,
Faculté des Sciences de l'Ingénieur Université Mentouri Constantine
2Laboratoire des couches minces, Faculté des sciences Université MENTOURI
Constantine ALGERIA
3Departement de physique, Institut des science Exactes Centre Universitaire
d'Oum el Bouaghi
04000 OUM EL BOUAGHI, ALGERIA
e-mail: zaabat@hotmail.com
Abstract. New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. Non linear variations of the bias and gate-source and gate-drain capacities have been found. A simulated values show excellent agreement with experimental results.
Keywords: modelling,
capacities, MESFET GaAs.
Paper received 19.03.03; accepted for publication
17.06.03.
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