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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 3. P. 079-082.
Growing the epitaxial undoped and N-doped ZnO films
by radical beam gettering epitaxy
Berdyansk State Pedagogical University, 4, Shmidta str., 71118 Berdyansk, Ukraine
Phone: (06153)71583, e-mail: rogozin@bdpu.org
Abstract. Epitaxial undoped and N-doped ZnO films were obtained using the method of
radical beam gettering epitaxy. Structural and luminescent properties of the obtained
films were researched. In both cases, there can be seen orientation of the films along caxis. In the spectrum of low-temperature photoluminescence of N-doped ZnO films,
observed was a peak 3.31 eV probably of a neutral acceptor-bound exciton NO. The
nature of donor-acceptor band 3.23 eV and green band 2.56 eV was discussed.
Keywords: ZnO, N-doping, photoluminescence, intrinsic defects.
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