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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 3. P. 203-208.
Low-frequency noise in nFinFETs of different
dimensions processed in strained and non-strained SOI wafers
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
45, prospect Nauky, 03028 Kyiv, Ukraine
Phone: +380445256453; e-mail: natali@isp.kiev.ua, kudinavaleriya@yahoo.com
Abstract. The results of low-frequency noise investigation in fully-depleted (FD)
nFinFETs of W eff = 0.02 to 9.87 µm, L eff = 0.06 to 9.9 µm, processed on standard (SOI)
and strained (sSOI) wafers are presented. It is shown that the McWhorter noise is typical
at zero back gate voltage for the devices studied and the density of the corresponding
noisy traps in the SiO 2 portion of the gate oxide is, as a rule, much higher than that in the
HfO 2 portion. The results on the McWhorter noise are used for studying the behavior of
the electron mobility µ and the free electron density N S in the channel at V
* ≥ 0.4 V where V* is the gate overdrive voltage. It is also shown that the Linear Kink Effect (LKE)
Lorentzians appear in the low-frequency noise spectra at an accumulation back gate
voltage and that the parameters of those Lorentzians are different for the sSOI and SOI
nFinFETs. This is the first observation of the LKE noise under a back-gate accumulation
bias for sufficiently wide nMuGFET.
Keywords: low-frequency noise, FinFET, fully-depleted, SOI, sSOI, Linear Kink Effect.
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