Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 3. P. 287-293.
DOI: https://doi.org/10.15407/spqeo14.03.287

Optical absorption edge and luminescence in phosphorous-implanted Cu6PS5X (X = I, Br) single crystals
I.P. Studenyak1, V.Yu. Izai1, V.О. Stephanovich1, V.V. Panko1, P. Kúš2, A. Plecenik2, M. Zahoran2, J. Greguš2, T. Roch2

1Uzhhorod National University, Physics Faculty, 46, Pidhirna str. 88000 Uzhhorod, Ukraine
2Comenius University, Faculty of Mathematics, Physics and Informatics, Mlynska dolina, 84248 Bratislava, Slovakia E-mail:studenyak@dr.com

Abstract. Implantation of Cu 6 PS 5 X (X = I, Br) single crystals was carried out for different values of fluence with using P + ions; the energy of ions was 150 keV. For the implanted Cu 6 PS 5 X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispersive X-ray spectroscopy. Spectrometric studies of optical absorption edge and luminescence were carried out within the temperature range 77…320 K. The influence of ionic implantation on luminescence spectra, parameters of Urbach absorption edge, parameters of exciton-phonon interaction as well as ordering-disordering processes in Cu 6 PS 5 X (X = I, Br) superionic conductors have been studied.

Keywords: superionic crystal, implantation, absorption edge, Urbach rule, exciton- phonon interaction, luminescence.

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