Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 3. P. 302-307.
DOI: https://doi.org/10.15407/spqeo14.03.302

Characterization of quaternary chalcogenide As-Ge-Te-Si thin films
H.H. Amer1, M. Elkordy2, M. Zien2, A. Dahshan3, R.A. Elshamy2*

1Solid State Department, National Center for Radiation Research and Technology, Nasr City, Cairo, Egypt
2Electronics and Communication Department, Faculty of Electronic Engineering, Menofia University, Egypt
3Department of Physics, Faculty of Science, Port Said University, Port Said, Egypt 2* E-mail: randa.aly72@yahoo.com

Abstract. Investigated in this paper is the effect of replacement of Te by Si on the optical gap and some other physical operation parameters of quaternary chalcogenide (where x = 0, 5, 10, 12 and 20 at.%) thin films. Thin films with the thickness 100-200 nm of were prepared using thermal evaporation of bulk samples. Increasing Si content was found to affect the average heat of atomization, average coordination number, number of constraints and cohesive energy of the alloys. Optical absorption is due to allowed non-direct transition, and the energy gap increases with increasing Si content. The chemical bond approach has been applied successfully to interpret the increase in the optical gap with increasing silicon content.

Keywords: thin films, optical gap, Si material, radiation effects, cohesive energy.

Full Text (PDF)

Back to N3 Volume 14