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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 3. P. 239-246.
The factors influencing luminescent properties
of ZnS:Mn obtained by the method of one-stage synthesis
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03650 Kyiv, Ukraine; e-mail: Yuyu@isp.kiev.ua Abstract. Considered in this paper is the model that combines appearance of defects responsible for self-activated (SA) emission in ZnS with its piezoelectric properties. Being based on analysis of the luminescence spectrum, the authors demonstrate the influence of mechanical destruction, impact of ultrasound, microwave radiation and pulsed magnetic field on the emission efficiency for centers of luminescence connected with intrinsic defects in ZnS:Mn prepared using the method of self-propagating high-temperature synthesis (SHS). It has been shown that downsizing the ZnS:Mn crystals prepared according to the above method as well as more discrete differentiation of phases present in this material due to development and growth of inner boundaries and surface under external actions leads to quenched SA-photoluminescence with λ ∼ 400–525 nm.
Keywords: self-activated luminescence, ZnS:Mn, mechanical destruction, ultrasonic action, super-high-frequency radiation, pulsed magnetic field.
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