Semiconductor Physics, Quantum Electronics & Optoelectronics. 2013. V. 16, N 3. P. 289-292.
DOI: https://doi.org/10.15407/spqeo16.03.289/

Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
A.E. Belyaev1, N.S. Boltovets2, Yu.V. Zhilyaev3, V.S. Zhigunov1, R.V. Konakova1, V.N. Panteleev3, A.V. Sachenko1, V.N. Sheremet1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prosp. Nauky, 03028 Kyiv, Ukraine; e-mail: konakova@isp.kiev.ua
2State Enterprise Research Institute “Orion” 8a, Eugene Pottier str., 03057 Kyiv, Ukraine
3Ioffe Physico-Technical Institute, Russian Academy of Sciences 26, Politekhnicheskaya str., 194021 Sankt-Peterburg, Russia

Abstract. We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB2-Al-Ti-n-GaN with contact resistivity ρс = 0.18 Ω·cm2 and 1.6·10-4Ω·cm2 , respectively, and the effect of microwave treatment on their electrophysical properties. After microwave treatment for time t up to 1000 s, the contact resistivity dropped by 16% (60%) in the contact to AlN (GaN). This seems to result from increase of the number of structural defects in the semiconductor near-contact region caused by relaxation of intrinsic stresses induced by microwave radiation.

Keywords: ohmic contact, contact resistivity, microwave treatment, intrinsic stresses.

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