Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 3. P. 227-231.
https://doi.org/10.15407/spqeo17.03.227

                                                                 

A model for non-thermal action of microwave radiation on oxide film/semiconductor structures
O.B. Okhrimenko

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine Phone: 38(044) 525-62-61; fax: 38(044) 525-83-42; e-mail: olga@isp.kiev.ua

Abstract. A model is considered that explains mechanism of non-thermal action of microwave radiation on the thin SiO2 (TiO2 , Er2O3 , Gd2O3) film/SiC and SiO2/GaAs structures. It assumes that the centers of electron-hole recombination are redistributed because of resonance interaction between dislocations of certain length and microwave radiation. As a result, additional bands appear in photoluminescence (PL) spectra of the oxide film/SiC structures or intensities of some bands are redistributed in the PL spectra of the SiO2/GaAs structure, as well as optical density of the oxide film/SiC structures changes.

Keywords:microwave radiation, luminescence, silicon carbide.

Manuscript received 03.03.14; revised version received 21.07.14; accepted for publication 16.09.14; published online 30.09.14.

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