Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 3. P. 268-271.
https://doi.org/10.15407/spqeo17.03.268

                                                                 

Heterostructure ohmic contacts to p-CdTe polycrystalline films
A.V. Sukach1 , V.V. Tetyorkin1 , A.I. Tkachuk2

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine
2 V. Vinnichenko Kirovograd State Pedagogical University, Kirovograd, Ukraine
Phone: 38 (044) 525-54-61, e-mail: teterkin@isp.kiev.ua

Abstract. Heterostructure contacts p+ -PbTe/p-CdTe were prepared using the hot-wall technique on glassceramic substrates. It has been shown that the potential barrier at the p+ -PbTe/p-CdTe interface is not formed in the case of heavily doped lead telluride. That allows one to create ohmic heterocontacts of metal-p+ -PbTe/p-CdTe type. The transverse and in-plane transport of carriers has been investigated as a function of bias voltage and temperature. The current-voltage characteristics measured for the transverse arrangement of contacts exhibited ohmic behavior. The current-voltage characteristics of these contacts are determined by unipolar injection of holes from p+ -PbTe into p-CdTe. The in- plane transport has been explained by presence of potential barriers at the grain boundaries. The potential barrier height has been estimated to be ~0.1 eV at room temperature. The mechanism of carrier transport is thermionic emission.

Keywords:polycrystalline CdTe, transverse and in-plane transport, ohmic contact, PbTe.

Manuscript received 07.02.14; revised version received 02.07.14; accepted for publication 16.09.14; published online 30.09.14.

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