Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 3. P. 248-254.
DOI: https://doi.org/10.15407/spqeo18.03.248

Annealing-induced formation of Sn2P2S6 crystallites in As2S3-based glass matrix
Yu.M. Azhniuk1, A.V. Gomonnai1, O.O. Gomonnai2, S.M. Hasynets3, F. Kováč4, V.V. Lopushansky1, I. Petryshynets4, V.M. Rubish3, D.R.T. Zahn5

1Institute of Electron Physics, National Academy of Sciences of Ukraine, 21, Universytetska str., 88017 Uzhhorod, Ukraine
2Uzhhorod National University, 46, Pidhirna str., 88000 Uzhhorod, Ukraine
3Uzhhorod Scientific and Technology Center, Institute for Information Recording, National Academy of Sciences of Ukraine,
4, Zamkovi Skhody, 88000 Uzhhorod, Ukraine 4Institute of Materials Science, Slovak Academy of Sciences, Watsonova 47, Košice 04001, Slovakia
5Chemnitz University of Technology, D-09107 Chemnitz, Germany Phone +38(0312)-643822; fax +38(0312)-643650; e-mail: yu.azhniuk@gmail.com

Abstract. Sn–As–P–S glasses were obtained using co-melting of pre-synthesized As2S3 and Sn2P2S6. Their structure and composition were confirmed by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, and micro-Raman scattering. Crystallization of Sn2P2S6 crystallites from the glass matrix is observed at annealing under relatively low temperatures (410…580 K).

Keywords: glass, nanostructures, electron microscopy, Raman spectroscopy.

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