Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 3. P. 267-271.
DOI: https://doi.org/10.15407/spqeo18.03.267

Carrier transport mechanisms in reverse biased InSb p-n junctions
A.V. Sukach1, V.V. Tetyorkin1, A.I. Tkachuk2

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
2V. Vinnichenko Kirovograd State Pedagogical University, Kirovograd, Ukraine Phone 38 (044) 525-1813, e-mail: teterkin@isp.kiev.ua

Abstract. Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of n-type conductivity. The investigations were focused on the reverse current as a function of bias voltage and temperature. The obtained experimental data show that local inhomo-geneities in the depletion region are responsible for the excess tunneling current observed in the reverse biased junctions. The inhomogeneities have been attributed to dislocations, precipitates or other extended defects. A phenomenological model is proposed to explain experimental data.

Keywords: InSb, photodiode, inhomogeneous junction, tunnelling breakdown.

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