Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 3. P. 286-291.
DOI: https://doi.org/10.15407/spqeo18.03.286

Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power
D.V. Myroniuk1, A.I. Ievtushenko1, G.V. Lashkarev1, V.T. Maslyuk2, I.I. Timofeeva1, V.A. Baturin3, O.Yu. Karpenko3, V.M. Kuznetsov3, M.V. Dranchuk1

1Frantsevich Institute for Problems of Material Science, NAS of Ukraine, 3, Krzhizhanovsky str., 03680 Kyiv, Ukraine
2Institute of Electron Physics, NAS of Ukraine, 21, Universitetska str., 88017 Uzhgorod, Ukraine,
3Institute of Applied Physics, NAS of Ukraine, 58, Petropavlivska str., 40000 Sumy, Ukraine Corresponding author. Phone: 38(044) 424-15-24; e-mail: denysmyroniuk@gmail.com

Abstract. Transparent conductive oxide thin films of Al-doped ZnO grown by rf magnetron sputtering were irradiated with high energy electrons with the energy 12.6 MeV and fluence 5•1014 e/cm2. The films were produced using different sputtering powers. It has been shown that electron irradiation creates defects that lead to distortions of the crystal lattice, which results in reduced crystallinity of the films. Also, it leads to film heating that results in radiation annealing and relaxation of the lattice.

Keywords: transparent conductive aluminium doped zinc oxide, AZO, electron irradiation, point defects, X-ray diffraction, stress, resistance.

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