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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 3. P. 297-301.
Composition and concentration dependences of electron mobility
in semi-metal Hg1–xCdxTe quantum wells
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine, *E-mail: emelezhik@gmail.com Abstract. Modeled in this work is the electron mobility in the n-type Hg0.32Cd0.68Te/Hg1–xCdxTe/Hg0.32Cd0.68Te quantum well being in the semi-metal state at T = 77 K. Calculations take into account longitudinal polar optical phonon scattering, charged impurities scattering and electron-hole scattering. The Boltzmann transport equation has been solved directly to account the inelasticity of optical phonon scattering. Numerical modeling showed that the intrinsic electron mobility at liquid nitrogen temperature is sufficiently low. This mobility can be increased up to the values close to 105…106 cm2/(V∙s) by increasing the electron concentration in the well. A higher electron concentration could be reached by doping the barriers or by applying the top gate voltage. The effect of mobility growth could be explained by the enhancement of 2DEG screening and the decrease of holes concentration. Keywords: electron mobility, quantum well, optical phonon scattering.
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