Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 3. P. 317-323.
DOI: https://doi.org/10.15407/spqeo18.03.317

Ohmic contacts based on Pd to indium phosphide Gunn diodes
A.E. Belyaev1, N.S. Boltovets2, A.V. Bobyl3, A.V. Zorenko2, I.N. Arsentiev3, V.P. Kladko1, V.M. Kovtonyuk2, R.V. Konakova1, Ya.Ya. Kudryk1, A.V. Sachenko1, V.S. Slipokurov1, A.S. Slepova2, N.V. Safryuk1, A.I. Gudymenko1, V.V. Shynkarenko1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03650 Kyiv, Ukraine, e-mail: konakova@isp.kiev.ua
2State Enterprise Research Institute “Orion”, 03057 Kyiv, Ukraine
3A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 197101, St. Petersburg, Russian Federation

Abstract. Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n+-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n+-n-n++-n+++-InP structure. The specific contact resistance measured at room temperature was about 7∙10–5 Ohm∙cm2. Voltage-current characteristics within the temperature range 110 to 380 K are linear. Gunn diodes with such contacts, which were made as a straight mesa-structure in a pulsed mode (pulse duration of 100 ns, pulse ratio of 1000, operating current of 2.2 A), generated the microwave power ~10 mW in the V-band.

Keywords: ohmic contact, specific contact resistance, indium phosphide Gunn diode, heating temperature.

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