Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 3. P. 295-298.
DOI: https://doi.org/10.15407/spqeo19.03.295

Electrical properties of InSb p-n junctions prepared by diffusion methods
A.V. Sukach1, V.V. Tetyorkin1, A.I. Tkachuk2

11V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
2V. Vinnichenko Kirovograd State Pedagogical University, Kirovograd, Ukraine Tel. (38 044) 525-1813, e-mail: teterkin@isp.kiev.ua

Abstract. InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have been obtained for the junctions prepared using the two-stage diffusion process.

Keywords: InSb, photodiode, two-stage diffusion, annealing.

Full Text (PDF)


Back to Volume 19 N3