Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (3), P. 325-329 (2017).

Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids
V.F. Onyshchenko1, L.A. Karachevtseva1, O.O. Lytvynenko1, M.M. Plakhotnyuk2, O.J. Stronska1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Photonic Semiconductor Structure Department, 41, prospect Nauky, 03680 Kyiv, Ukraine, E-mail:
2Technical University of Denmark, Department of Micro- and Nanotechnology, Ørsteds Plads building 345 East, DK-2800 Kgs. Lyngby, Denmark

Abstract. We calculated the dependence of effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids on the diameter of the cone base, the side of the pyramid base, the height of cone and pyramid. The numerical calculation shows that n-type polished plate of single crystal silicon and n-type plate of black silicon have a high minority carrier lifetime both in the bulk and on the silicon surface, indicating a high purity of both the bulk of silicon and its surface. However, the measured experimentally effective lifetime of minority carriers in the n-type black silicon is 1.55 ms and is determined by the surface lifetime. The measured effective lifetime of minority charge carriers in the p-type polished silicon is 1.24 ms. The minority carrier lifetime in the bulk of the polished p-type silicon is lower than the surface one.

Keywords: effective minority carrier lifetime, excess minority carrier, black silicon.

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