Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (3), P. 330-334 (2017).

Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface
P.V. Parfenyuk1, A.A. Evtukh1,2, I.M. Korobchuk2, V.I. Glotov3, V.V. Strelchuk1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine, E-mail:
2Institute of High Technologies, Taras Shevchenko National University of Kyiv, Kyiv, Ukraine
3Institute of Microdevices, Kyiv, Ukraine

Abstract. The influence of porous alumina template morphology on silicon films growth at deposition by PE CVD has been investigated. As it was shown, the structural properties of silicon phases depend on the pore geometry and surface morphology of the anodized porous alumina substrate. In case of porous alumina formation in one stage, ripple-like morphology takes place. The growth of a-Si:H film is observed at deposition. After two-stage anodization, the porous alumina has tipped/ribbed morphology. In this case, usually a-Si:H film grows on the bottom of the pores, and nc-Si:H/a-Si:H one grows on the tips. In the case of deep pores, the nanocrystalline nc-Si:H film grows only above the top of the pores. The obtained results could be used when developing new types of photocells, sensors, nanophotonics and ionics devices.

Keywords: amorphous phase, nanocrystalline silicon films, porous anodic alumina, chemical vapor deposition, textured surface, Raman spectra.

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