Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (3), P. 355-361 (2017).

Modeling of X-ray rocking curves for layers after two-stage ion-implantation
O.I. Liubchenko, V.P. Kladko, O.Yo. Gudymenko

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail:

Abstract. In this work, we consider the approach for simulation of X-ray rocking curves inherent to InSb(111) crystals implanted with Be+ ions with various energies and doses. The method is based on the semi-kinematical theory of X-ray diffraction in the case of Bragg geometry. A fitting procedure that relies on the Hooke–Jeeves direct search algorithm was developed to determine the depth profiles of strain and structural disorders in the ion-modified layers. The thickness and maximum value of strain of ion-modified InSb(111) layers were determined. For implantation energies 66 and 80 keV, doses 25 and 50 µC, the thickness of the strained layer is about 500 nm with the maximum value of strain close to 0.1%. Additionally, an amorphous layer with significant thickness was found in the implantation region.

Keywords: X-ray rocking curve modeling, two-stage implantation, Hooke-Jeeves direct search, strain distribution.

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