Semiconductor Physics, Quantum Electronics & Optoelectronics, 23 (3), P. 253-259 (2020).

Comparative characteristics of TiO2(Er2O3, Dy2O3)/por-SiC/SiC heterostructures (Review)
Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko

V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine 41, prospect Nauky, 03680 Kyiv, Ukraine *E-mail:

Abstract. In this work, comparative characteristics of thin oxide films (OF) of titanium, erbium, and dysprosium formed on silicon carbide substrates in the presence and absence of a porous silicon carbide (por-SiC) layer have been considered. It has been shown that regardless of the presence of a porous buffer layer in the TiO2(Er2O3, Dy2O3)/por-SiC/SiC and TiO2(Er2O3, Dy2O3)/SiC structures, oxide layers of the approximately equal thickness are formed, and quality of the interface in OF/SiC structures is higher than that in the OF/por-SiC/SiC structures. An increase in the time and temperature of rapid thermal annealing makes it possible to improve the quality of the oxide film/substrate interface regardless of the presence of a porous buffer layer in the structure. In this case, the narrowest interface “oxide film/buffer porous layer/substrate” is observed for the TiO2 /por-SiC/SiC structures. The TiO2 /por-SiC/SiC structures are most sensitive to changes in the parameters of rapid thermal annealing, and the Er2O3/por-SiC/SiC structures are the most stable.

Keywords:interface, thin oxide films, porous silicon carbide, Auger spectrometry, optical absorption, photoluminescence.

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