Semiconductor Physics, Quantum Electronics & Optoelectronics, 23 (3), P. 271-275 (2020).
https://doi.org/10.15407/spqeo23.03.271
Determination of temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes
LPMRN Laboratory, Department of Materials Science, Faculty of Sciences and Technology,
University of Mohamed El Bachir El Ibrahimi,
Bordj-Bou-Arreridj 34030, Algeria
E-mail: hlat26@ yahoo.fr.
Abstract. The current-voltage-temperature profiling method has been used with 4H-SiC Schottky barrier diodes and presented for determining the electron effective mass in
4H-SiC. The extracted electron effective mass has been found to be temperature dependent, it decreases with increasing the temperature. Moreover, a good agreement was found between our obtained values of electron effective mass (m* = 0.18m0, 0.21m0) at room temperature and other values that are obtained by different methods.
Keywords:4H-SiC, Schottky diode, electron effective mass, I-V method, reverse current, thermionic emission, tunneling current.
A. Latreche
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