Semiconductor Physics, Quantum Electronics & Optoelectronics, 23 (3), P. 271-275 (2020).

Determination of temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes
A. Latreche

LPMRN Laboratory, Department of Materials Science, Faculty of Sciences and Technology, University of Mohamed El Bachir El Ibrahimi, Bordj-Bou-Arreridj 34030, Algeria E-mail: hlat26@

Abstract. The current-voltage-temperature profiling method has been used with 4H-SiC Schottky barrier diodes and presented for determining the electron effective mass in 4H-SiC. The extracted electron effective mass has been found to be temperature dependent, it decreases with increasing the temperature. Moreover, a good agreement was found between our obtained values of electron effective mass (m* = 0.18m0, 0.21m0) at room temperature and other values that are obtained by different methods.

Keywords:4H-SiC, Schottky diode, electron effective mass, I-V method, reverse current, thermionic emission, tunneling current.

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