¹V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prosp. Nauky, 03680 Kyiv, Ukraine
²V. Bakul Institute for Superhard Materials, NAS of Ukraine
2, Avtozavodska str., 04074 Kyiv, Ukraine
³National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”
37, prosp. Peremohy, 03056 Kyiv, Ukraine
E-mail:viktor.strelchuk@ccu-semicond.net, phone/fax: +38 (044) 525 64 73

Abstract. Semiconducting boron-doped diamond single crystals of cubo-octahedral habit with prevalent development of octahedron {111} faces and insignificant area of cube {001}, rhombo-dodecahedron {110} and tetragon-trioctahedron {311} faces were obtained using solution-melt crystallization at high pressure 6.5 GPa and temperatures 1380…1420 °C. Using the Fe-Al solvent, which allows controlled incorporation of boron dopant between 2·10–4…10–2 at.% made it possible to vary the electro-physical properties of the crystals. Methods of micro-photogrammetry, atomic force microscopy, and micro-Raman spectroscopy were applied to reveal sectorial inhomogeneity of impurity composition and morphology of different crystal faces. The obtained crystals were shown to have high structural perfection and boron concentration ranging approximately from 1·1017 up to 7·1018 cm–3. An increase in boron concentration increases the area of {111} faces relatively to the total crystal area. Nanoscale morphological features like growth terraces, step-bunching, dendrite-like nanostructures, columnar substructures, negative growth pyramids on different crystal faces are shown to reflect peculiarities of carbon dissolution at high pressures and temperatures. The changes in the crystals’ habit and surface morphology are discussed in relation to inhomogeneous variation of thermodynamic conditions of crystal growth and dissolution at different boron concentrations.

Keywords: boron doped HPHT diamond, Raman spectroscopy, AFM microscopy, micro-photogrammetry.

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