Semiconductor Physics, Quantum Electronics & Optoelectronics, 24 (3), P. 272-276 (2021).
DOI: https://doi.org/10.15407/spqeo24.03.272

Preparation of quaternary compounds Cu2ZnSnS4 by using the self-propagating high-temperature synthesis
Yu.Yu. Bacherikov1,*, M.N. Mirzayev2, A.G. Zhuk1, O.B. Okhrimenko1, N.V. Doroshkevich2, V.V. Kidalov3, V.Yu. Goroneskul1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03680 Kyiv, Ukraine
2Joint Institute for Nuclear Research,
6, Joliot-Curie Str., Dubna, Russian Federation 141980
3Dmytro Motornyi Tavria State Agrotechnological University,
18, B. Khmelnitsky Ave., UA-72312 Melitopol, Ukraine
*E-mail: Yuyu@isp.kiev.ua

Abstract. Possibility to prepare finely dispersed Cu2ZnSnS4 by using the method of self-propagating high-temperature synthesis has been studied in this work. Investigations of Raman scattering and IR-Fourier spectroscopy of the synthesized finely dispersed material have been carried out. The analysis of the Raman and IR-Fourier spectra showed that the synthesized material in the process of preparing is formed with a kesterite structure with the inclusion of a certain amount of secondary phases in the form of sulfides and stannites.

Keywords:self-propagating high-temperature synthesis, quaternary semiconductors, kesterite, Raman scattering, FTIR spectroscopy.

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