¹V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
41, prosp. Nauky, 03680 Kyiv, Ukraine
²Drohobych Ivan Franko State Pedagogical University,
24, I. Franko str., 82100 Drohobych, Ukraine
³The John Paul II Catholic University of Lublin,
14 Al. Racławickie, 20-950 Lublin, Poland
⁴National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”,
37, prosp. Peremogy, 03056 Kyiv, Ukraine
⁵IFW Dresden, Institute for Complex Materials,
Helmholtzstr. 20, 01069 Dresden, Germany
⁶Research Institute for Solid State Physics and Optics,
H-1525 Budapest, POB 49, Hungary
⁷National Pedagogical Dragomanov University,
9, Pirogova str., 01601 Kyiv, Ukraine
*Corresponding author e-mail: k.shportko@ukr.net

Abstract. The parameters of the boson peak (BP) and the first sharp diffraction peak (FSDP) in (As2S3)x(GeS2)1x glasses measured using high-resolution Raman spectroscopy and high-energy synchrotron X-ray diffraction measurements are examined as a function of x. It has been found that there is no correlation between the positions of BP and FSDP. The BP position shows a nonlinear composition behavior with a maximum at about x = 0.4, whereas the FSDP position changes virtually linearly with x. The intensities of both BP and FSDP show nonlinear composition dependences with the slope changes at x = 0.4, although there is no direct proportionality. Analysis of the partial structure factors for the glasses with x = 0.2, 0.4 and 0.6 obtained in another study has shown that the cation-cation atomic pairs of Ge–Ge, Ge–As and As–As make the largest contribution to FSDP, where the Ge–Ge and Ge–As pairs are dominant.

Keywords:chalcogenide glasses, Raman spectroscopy, X-ray diffraction, boson peak, first sharp diffraction peak, molecular structural units.

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