Semiconductor Physics, Quantum Electronics & Optoelectronics, 24 (3), P. 319-327 (2021).

Simulation and characterization of planar high-efficiency back contact silicon solar cells
A.V. Sachenko1, V.P. Kostylyov1, R.M. Korkishkov, V.M. Vlasiuk1, I.O. Sokolovskyi1, B.F. Dvernikov1, V.V. Chernenko1, M.A. Evstigneev2

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
45, prospect Nauky, 03680 Kyiv, Ukraine
2Memorial University of Newfoundland, St. John’s, NL, Canada

Abstract. Short-circuit current, open-circuit voltage, and photoconversion efficiency of silicon high-efficiency solar cells with all back contact (BCSC) with planar surfaces have been calculated theoretically. In addition to the recombination channels usually considered in this kind of modeling, namely, radiative, Auger, Shockley–Read–Hall, and surface recombination, the model also takes into account the nonradiative trap-assisted exciton Auger recombination and recombination in the space charge region. It is ascertained that these two recombination mechanisms are essential in BCSCs in the maximum power operation regime. The model results are in good agreement with the experimental results from the literature.

Keywords: modeling, solar cells, silicon, space charge region recombination, quantum efficiency.

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