https://doi.org/10.15407/spqeo3.04.438
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 4. P. 438-444.
PACS: 61.10.Kw, 61.16.Ch, 68.35.Bs, 78.20.Ci, S7.12
Investigations of surface morphology and microrelief
of GaAs single crystals by complementary methods
D. Zymierskaa, J. Auleytnera and N. Dmitrukb
a Institute of Physics, Polish Academy of Sciences, Warsaw, Poland al. Lotników 32/46, 02-668
tel.: (48) (22) 843-60-34 or 843-70-01 ext. 3304 fax: (48) (22) 843-09-26 e-mail: zymier@ifpan.edu.pl
b Institute Semiconductor of Physics, National Academy of Sciences of Ukraine, Prosp. Nauki 45, 03028, Kiev, Ukraine
Tel: +38 044 2656486 Fax: +38 044 2658342 E-mail: nicola@dep39.semicond.kiev.ua
Abstract. The paper presents the study of morphology and roughness of (100) surfaces of GaAs single crystals grown by the Czochralski method. The surfaces were prepared in a different way: mechanical polishing, chemomechanical polishing, mechanical grinding, wet polishing etching, anisotropic etching. The X-ray grazing incidence reflectivity, atomic force microscopy, scanning tunneling microscopy, optical specular reflection, and profilometric methods were complementary used. The application of these methods allowed to reveal the details of differences in the surface morphology varied with the way of its preparation.
Keywords: GaAs, surface roughness, X-ray reflectometry, optical reflection, atomic force microscopy, profilometry
Paper received 21.06.00; revised manuscript received 10.09.00; accepted for publication 12.12.00.
Full text in PDF (Portable Document Format) are available for free. [PDF 230K]
The copies of separate papers in PDF format can be ordered using the address
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.