https://doi.org/10.15407/spqeo4.04.253
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 4. P. 253-259.
PACS: 73.30.+y, 73.40.Kp, 73.50.Pz
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact
L.V. Shekhovtsov
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
Prospect Nauky 45, 03028 Kyiv, Ukraine
Phone: 380 44 2659464, Fax: 380 44 2658342, E-mail:k208@photon.kiev.ua
Abstract. We investigated transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for Ge-GaAs heterostructures and NbN-GaAs Schottky contacts is determined by interaction between photocurrents flowing in the bulk and near interfaces.
An additional unmodulated illumination of the samples during the measurements of the photovoltage spectral curves changes the interaction of photocurrents. This leads to modification of the photovoltage spectral curves. An analysis of their features enables one to put forward models for interaction of photocurrents flowing near the interfaces and obtain the characteristics of the interface uniformity in composite semiconductor structures.
Keywords: heterostructure, Schottky contact, transversal photovoltage, inhomogeneity.
Paper received 07.08.01; revised manuscript received 16.10.01; accepted for publication 12.12.01.
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